Position Description

The candidate will design, fabricate and characterize GaN polariton structures in view of detecting entangled photon pairs produced by parametric scattering of polaritons. The main techniques that will be used are photo-electrochemical etching, micro-photoluminescence, micro-reflectivity and angle-resolved photoluminescence.

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Required Qualifications

• Master of Science in Physics, Materials Science or Electrical Engineering 
• Experience in optical, electrical and structural characterization of gallium nitride
• Experience in the photo-electrochemical etching of GaN membranes 

Application Procedure

In order to be considered, the application must include:

• Application Form (Form Greek or Form English to the left)
• Brief CV
• Scanned copies of academic titles
• Certificate for enrollment in a PhD program

Appointment Duration