Two (2) PhD student position in the project NEP (P.I. Emm. Stratakis)

Job Board

Two (2) PhD student position in the project NEP (P.I. Emm. Stratakis)

Position Description

Job 1

Micro-photoluminescence and time decay measurements in semiconductor nanostructures.

The candidate will apply micro-photoluminescence, time-resolved photoluminescence and photon-correlation spectroscopy techniques on various types of semiconductor nanostructures such as quantum dots and nanowires.

 

Job 2

GaN polariton structures and their use as sources of entangled photons.

The candidate will design, fabricate and characterize GaN polariton structures in view of detecting entangled photon pairs produced by parametric scattering of polaritons. The main techniques that will be used are photo-electrochemical etching, micro-photoluminescence, micro-reflectivity and angle-resolved photoluminescence.

For the full announcement, follow the link "Related Documents"

 

 

Required Qualifications

Job 1

  • Master of Science in Physics, Materials Science or Electrical Engineering 
  • Experience in optical, electrical and structural characterization of semiconductors 
  • Experience in the optical characterization of single semiconductor nanostructures with microscopy techniques

 

Job 2

  • Master of Science in Physics, Materials Science or Electrical Engineering
  • Experience in optical, electrical and structural characterization of gallium nitride 
  • Experience in the photo-electrochemical etching of GaN membranes 

Application Procedure

Interested candidates who meet the aforementioned requirements are kindly asked to submit their applications with cc to Prof. Nikolaos Pelekanos (pelekano@materials.uoc.gr).

 

In order to be considered, the application must include:

  • Application Form (Form Greek or Form English to the left)
  • Detailed curriculum vitae (CV) of the candidate
  • Scanned Copies of academic titles
  • Certificate for enrollment in PhD program

Appointment Duration

3 months
Ημερομηνία Ανάρτησης: 03.11.2021
Καταληκτική Ημερομηνία: 18.11.2021
Ινστιτούτο: Ινστιτούτο Ηλεκτρονικής Δομής & Λέϊζερ